inchange semiconductor isc product specification isc silicon npn power transistors MJH13090/13091 description collector-emitter sustaining voltage- : v ceo(sus) = 400v(min)?MJH13090 = 450v(min)?mjh13091 high switching speed applications designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. they are partic- ularly suited for line operated switch-mode applications. typical applications: switching regulators inverters solenoid and relay drivers motor controls deflection circuits absolute maximum ratings(t a =25 ) symbol parameter value unit MJH13090 650 v cev collector-emitter voltage mjh13091 750 v MJH13090 400 v ceo(sus) collector-emitter voltage mjh13091 450 v v ebo emitter-base voltage 6 v i c collector current-continuous 15 a i cm collector current-peak 20 a i b b base current-continuous 5 a i bm base current-peak 10 a p c collector power dissipation @t c =25 125 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.0 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistors MJH13090/13091 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit MJH13090 400 v ceo(sus) collector-emitter sustaining voltage mjh13091 i c =100ma ; i b =0 450 v v ce (sat)- 1 collector-emitter saturation voltage i c = 10a; i b = 2a i c = 10a; i b = 2a;t c =100 1.0 2.0 v v ce (sat)- 2 collector-emitter saturation voltage i c = 15a; i b = 3a 3.0 v v be (sat) base-emitter saturation voltage i c = 10a; i b = 2a i c = 10a; i b = 2a;t c =100 1.5 1.5 v MJH13090 v cev =650v;v be (off) =1.5v v cev =650v;v be (off) =1.5v;t c =100 0.5 2.5 i cev collector cutoff current mjh13091 v cev =750v;v be (off) =1.5v v cev =750v;v be (off) =1.5v;t c =100 0.5 2.5 ma MJH13090 v ce = 650v; r be = 50 ,t c = 100 3.0 i cer collector cutoff current mjh13091 v ce = 750v; r be = 50 ,t c = 100 3.0 ma i ebo emitter cutoff current v eb = 6v; i c =0 1.0 ma h fe dc current gain i c = 10a ; v ce = 3v 8 c ob output capacitance i e = 0; v cb = 10v; f test =1.0khz 350 pf switching times;resistive load t d delay time 30 50 ns t r rise time 130 500 ns t s storage time 550 2500 ns t f fall time i c = 10a , v cc = 250v; i b1 = 1.25a;t p = 30 s; v be (off) = 5v duty cycle 2.0% 100 500 ns isc website www.iscsemi.cn 2
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